Developing a new concept for High device performance/high flexibility The formation of Fine metal patterns(≤100 μm)for FHE(flexible hybrid electronics) and the fabrication of 3D step height metal interconnection

DI(direct imaging) technology for creating non-damaging fine pattern(≦100 μm)/pitch(≦20 μm) for stretchable device and display

 

Client / Market

• Technical field for FHE (flexible hybrid electronics)
• Technical field for DI (direct imaging) fine pattern/pitch formation for non-damaging flexible/stretchable display areas

 

Necessity of this Technology

• When using existing mass production MEMS Fab. process/equipment, the process cannot be performed if there is step height (≧5 μm) between the substrate and the thin chip (equipment / process compatibility issue).
• n forming 3D interconnection, wire-bonding creates mechanical damage of less than 50 μm to the thin chip due to heat, pressure, and ultrasonic energy.
• Absence of face-up 3D metal interconnection technology to fabricate fine pattern (≦ 100 μm) pitch (≦20 μm)
• Absence of technology that can form flexible/stretchable pattern without damaging low Tg flexible/stretchable substrate (wiring printing and sintering technology)
• Therefore, to overcome such problems, it is necessary to develop DI type nondamaging fine pattern/pitch creation technology.

 

Technical Differentiation

• Technology to effectively form 3D interconnection masklessly without causing mechanical damage to the thin chip with thickness below 50 μm mounted on the flexible/stretchable substrate
• Technology to create fine pattern (≦100 μm)/pitch (≦20 μm) with the DI (direct imaging) method
• Technology to sinter ink material on the flexible/stretchable substrate without thermal damage
• Technology for intrinsically/geometrically robust metal pattern formation for stretchable display
• Technology to rework and repair for mass production yield improvement

 

Excellence of Technology

• Formation of 100 μm×100 μm (thickness≈5 μm) micro-LED top & bottom electrodes and securing face-up 3D metal interconnection (line width ≦ 30 μm)
• Securing DI micro metal pattern method when line width is below 10 μm
• Establishment of database by ink material for overcoming 3D step height in the flat (0 μm) to 50 μm area
• Securing sample production technology for micro step height (flat (0 μm) to 50 μm) control for DI process and ink property evaluation
• Performance of laser sintering test for non-damaging ink sintering on polymer substrate

 

Current Intellectual Property Right Status

PATENT

• Wearable Dry Patch Type Hybrid Substrate and Manufacturing Method (KR1756847)
• Non-penetrating, Superhydrophobic Polyimide Film Manufacturing Method (KR1641207)
• Elastic Device Manufacturing Method and Elastic Device Manufactured with the Method (KR2017-0133265)
• Electrode Pattern Formation Using Laser Sintering and Electrode Pattern Formation System for the Method (KR2017-0060814)

KNOW-HOW

• Non-damaging, DI fine pattern/pitch formation technology
• Face-up 3D step-covered metal interconnection technology
• Intrinsically/geometrically flexible or stretchable metal formation technology
• Repair and maskless process technology for yield improvement